sheet resistance
英 [ʃiːt rɪˈzɪstəns]
美 [ʃiːt rɪˈzɪstəns]
网络 阻值; 方块电阻; 薄层电阻; 片电阻; 薄膜电阻
双语例句
- Graphic-art technique Test methods of precious metal pastes used for thick film microelectronics& Determination of sheet resistance
图形法-厚膜电路工艺用GB/T17473.3-1998厚膜微电子技术用贵金属浆料测试方法方阻测定 - Research on the Micro-Area Sheet Resistance Test System Based on EIT Technology
基于EIT技术的微区薄层电阻测试系统研究 - Then, the effects of heat treatment and temperature on the chemical composition and sheet resistance of the prepared films were investigated by XRD, EDXS and sheet resistance measurements.
利用X射线衍射和能量散射X射线能谱表征方法，并结合薄膜方块电阻的测定，探讨了热处理方式和热处理温度对薄膜化学组成及薄膜电阻的影响。 - "Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array"
GB/T14141-1993硅处延层、扩散层和离子注入层薄层电阻的测定直排四探针法 - The initial experiments on and analysis of sheet resistance, contact, photomask alignment, line width, and correlations between device parameters and dopants have been made.
对薄层电阻、接触、光掩模对准、线条宽度、器件参数与掺杂的相关性等内容进行了初步试验和分析。 - Some technical parameters are analyzed by the testing of sheet resistance and concentration grads, such as direction and flux of airflow, diffusion temperature, diffusion time, type of silicon substrate, clearance between source and silicon wafer. The proper technical parameters are fixed.
通过测试方块电阻和浓度梯度，分析了扩散气流方向以及大小、扩散温度、扩散时间、硅片衬底类型、扩散源和硅片之间的间隙等对扩散质量的影响，并选择了合适的工艺参数。 - For the as-deposited films, the sheet resistance is of inverse proportion function as the sputtering time.
溅射态合金薄膜方块电阻与溅射时间呈反比； - Sheet resistance of films deposited at various substrate temperatures was studied.
对衬底温度，方块电阻进行了研究。 - The surface morphology and properties of the thin-films were investigated by four-point probe ( FPP) sheet resistance measurement, AFM, SEM, Alpha-step IQ profilers and XRD, also the effects of N and AI doping on diffusion barrier property were discussed.
用四探针电阻测试仪（FPP）、AFM、SEM、Alpha-stepIQ台阶仪和XRD等分析测试方法对样品的形貌结构与特性进行了分析表征，并对N和Al的掺杂机理进行了讨论。 - Physical mechanism of low infrared emissivity for ITO film is discussed, and the critical sheet resistance of low infrared emissivity, which conduce to the theoretical study and the manufacture of infrared stealthy ITO film, is put forward in this paper.
讨论了高品质ITO膜具有低红外发射率的物理机理，并提出了低红外发射率临界方块电阻值，这有利於理论研究和工艺制备红外隐身ITO膜。 - The measurement results of spreading resistance, bevel and sheet resistance indicate that optimum design and fabrication are fulfilled.
对三重扩散实验样品进行的扩展电阻、磨角以及四探针方块电阻测试表明：获得了优化的器件设计和研制条件。 - The research shows that the electromagnetic performances of the multilayer media are related to ITO ( with sheet resistance 8 Ω) film's interface location, the layer number of the plane delamination media and the thickness of the plane delamination media, and so on.
多层平面分层介质系统的电磁性能与ITO膜（方块电阻为8Ω）所在界面位置和平面分层介质系统层数及各层厚度等有关。 - A new method for measuring sheet resistance of semiconductor using four-point probe has been developed.
本文介绍用四探针技术测量半导体薄层电阻的新方案。 - Of all these factors, the implantation dose has the most significant influence on mobility and sheet resistance.
在这些关系中，注入剂量对迁移率及薄层电阻有最主要的影响。 - Test methods include determination of solid content, viscosity, fineness, sheet resistance, resolution, weldability and solder leach resistance, adhesion.
测试方法包括固体含量、粘度、细度、方阻、分辨率、可焊性和耐焊性、附着力的测定。 - The influence of substrate temperature on ITO film's crystalline, sheet resistance and pressure stress is also reported.
研究了膜形衬底温度与膜结晶化程度的关系，以及膜形衬底温度对膜电阻和压应力的影响。 - The optimum effective length of resistors has been calculated by a simulation program, and the effects of thickness of square diaphragm and sheet resistance on the effective length and output responses were analyzed.
利用模拟程序确定了力敏电阻条的最优有效长度，分析了敏感膜片厚度，方块电阻等因素对电阻条有效长度和输出响应的影响。 - Effect of Sn Doping Content on Sheet Resistance and Structural Properties of ITO Films
锡掺杂对ITO膜方阻和结构的影响 - This instrument has been used to measure the sheet resistance distribution for Boron diffusion chip.
并用该仪器测定了硼扩散片的薄层电阻分布。 - How the sintering technics affected performance of the thick film PTC thermistor was studied. It is found that sheet resistance descends and TCR increases with the increasing of sintering peak temperature.
研究了烧结工艺对厚膜PTC热敏电阻性能的影响，结果表明：随着烧结峰值温度上升，厚膜电阻的方阻下降，电阻温度系数上升。 - In order to optimize the production process, the relationship between temperature, time, the sheet resistance and diffusion uniformity is researched.
然后，论文从理论指导实验出发，以优化生产工艺为目标，设计实验研究温度、时间、方块电阻和扩散均匀性的关系。 - The effects of the insert Ag layer thickness, annealing time and annealing temperature on the transmission, specific contact resistance and sheet resistance of Ag/ ITO multilayer films were investigated.
研究了Ag厚度、退火温度、退火时间对Ag/ITO多层膜的透过率、方块电阻和接触电阻率的影响。 - Research sputtering gridded voltage of 700V, various heat recasts Ni-Cr alloy sheet resistance stability. 4.
研究溅射屏栅电压为700V时，不同热处理温度对Ni-Cr合金薄膜电阻稳定性的影响。 - Relative to other parameters, the influences of sputtering power on structure of the films were small. But it was huge on the deposition rate of the films, thus affecting the film sheet resistance.
相对于其他参数，溅射功率对簿膜结构的影响很小，但是对于薄膜的溅射速率的影响巨大，从而影响了薄膜的方阻。 - The result indicates that dopant concentration, annealing temperature have strong influence on the sheet resistance of the films.
分析结果表明：ZAO薄膜的方块电阻受掺杂浓度以及退火温度的影响较大。 - The addition of doping ions and the increase of coating layers will reduce the sheet resistance.
掺杂离子的加入以及镀膜层数的增加都会降低其方块电阻。 - With the increase of the deposition temperature the sheet resistance and TCR of the films decreased.
随着沉积温度的增加，薄膜的方阻和电阻温度系数减小。